Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5.5A
Maximum Drain Source Voltage Vds
25V
Package Type
SOT-223
Series
STN6N60M2
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
6W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
1.8mm
Length
6.8mm
Standards/Approvals
No
Width
6.48mm
Automotive Standard
No
Alkuperämaa
China
Tuotetiedot
The STMicroelectronics device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 1 320,00
€ 0,33 1 kpl (4000 kpl/kela) (ilman ALV)
€ 1 656,60
€ 0,414 1 kpl (4000 kpl/kela) (Sis ALV:n)
4000
€ 1 320,00
€ 0,33 1 kpl (4000 kpl/kela) (ilman ALV)
€ 1 656,60
€ 0,414 1 kpl (4000 kpl/kela) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
4000
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5.5A
Maximum Drain Source Voltage Vds
25V
Package Type
SOT-223
Series
STN6N60M2
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
6W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
1.8mm
Length
6.8mm
Standards/Approvals
No
Width
6.48mm
Automotive Standard
No
Alkuperämaa
China
Tuotetiedot
The STMicroelectronics device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
