Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Series
DeepGate, STripFET
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
3.2mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
160nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Tuotetiedot
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 78,00
€ 3,90 kpl (toimitus putkessa) (ilman ALV)
€ 97,89
€ 4,894 kpl (toimitus putkessa) (Sis ALV:n)
Tuotantopakkaus (Putki)
20
€ 78,00
€ 3,90 kpl (toimitus putkessa) (ilman ALV)
€ 97,89
€ 4,894 kpl (toimitus putkessa) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Tuotantopakkaus (Putki)
20
| Määrä | Yksikköhinta | Per Putki |
|---|---|---|
| 20 - 98 | € 3,90 | € 7,80 |
| 100 - 198 | € 3,45 | € 6,90 |
| 200+ | € 3,00 | € 6,00 |
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Series
DeepGate, STripFET
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
3.2mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
160nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Tuotetiedot
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.