Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
Schottky Diode
Mount Type
Through Hole
Package Type
TO-220
Maximum Continuous Forward Current If
4A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Silicon Carbide Schottky Diode
Series
STPSC
Rectifier Type
SiC Schottky
Pin Count
2
Peak Reverse Current Ir
170μA
Maximum Forward Voltage Vf
1.3V
Minimum Operating Temperature
-55°C
Peak Non-Repetitive Forward Surge Current Ifsm
385A
Maximum Operating Temperature
175°C
Length
15.75mm
Height
4.6mm
Alkuperämaa
China
Tuotetiedot
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Thanks to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 2,00
€ 2,00 kpl (ilman ALV)
€ 2,51
€ 2,51 kpl (Sis ALV:n)
1
€ 2,00
€ 2,00 kpl (ilman ALV)
€ 2,51
€ 2,51 kpl (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
1
| Määrä | Yksikköhinta |
|---|---|
| 1 - 9 | € 2,00 |
| 10 - 99 | € 1,40 |
| 100 - 499 | € 1,20 |
| 500 - 999 | € 1,20 |
| 1000+ | € 1,15 |
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
Schottky Diode
Mount Type
Through Hole
Package Type
TO-220
Maximum Continuous Forward Current If
4A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Silicon Carbide Schottky Diode
Series
STPSC
Rectifier Type
SiC Schottky
Pin Count
2
Peak Reverse Current Ir
170μA
Maximum Forward Voltage Vf
1.3V
Minimum Operating Temperature
-55°C
Peak Non-Repetitive Forward Surge Current Ifsm
385A
Maximum Operating Temperature
175°C
Length
15.75mm
Height
4.6mm
Alkuperämaa
China
Tuotetiedot
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Thanks to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
