Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
2.3A
Maximum Drain Source Voltage Vds
20V
Package Type
SOT-23
Series
STripFET V
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
40mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
350mW
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Maximum Gate Source Voltage Vgs
8V
Forward Voltage Vf
1.1V
Maximum Operating Temperature
150°C
Height
1.3mm
Length
3.04mm
Standards/Approvals
No
Width
1.75mm
Automotive Standard
No
Tuotetiedot
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 6,83
€ 0,683 1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 8,57
€ 0,857 1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Standardi
10
€ 6,83
€ 0,683 1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 8,57
€ 0,857 1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Standardi
10
| Määrä | Yksikköhinta | Per Pakkaus |
|---|---|---|
| 10 - 90 | € 0,683 | € 6,83 |
| 100 - 490 | € 0,458 | € 4,58 |
| 500 - 990 | € 0,367 | € 3,67 |
| 1000 - 2990 | € 0,327 | € 3,27 |
| 3000+ | € 0,297 | € 2,97 |
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
2.3A
Maximum Drain Source Voltage Vds
20V
Package Type
SOT-23
Series
STripFET V
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
40mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
350mW
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Maximum Gate Source Voltage Vgs
8V
Forward Voltage Vf
1.1V
Maximum Operating Temperature
150°C
Height
1.3mm
Length
3.04mm
Standards/Approvals
No
Width
1.75mm
Automotive Standard
No
Tuotetiedot
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.