Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7.5A
Maximum Drain Source Voltage Vds
60V
Package Type
SO-8
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
21mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.5W
Typical Gate Charge Qg @ Vgs
25nC
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Length
5mm
Height
1.65mm
Standards/Approvals
No
Automotive Standard
No
Tuotetiedot
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 1 490,00
€ 0,596 1 kpl (2500 kpl/kela) (ilman ALV)
€ 1 869,95
€ 0,748 1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
€ 1 490,00
€ 0,596 1 kpl (2500 kpl/kela) (ilman ALV)
€ 1 869,95
€ 0,748 1 kpl (2500 kpl/kela) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
2500
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7.5A
Maximum Drain Source Voltage Vds
60V
Package Type
SO-8
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
21mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.5W
Typical Gate Charge Qg @ Vgs
25nC
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Length
5mm
Height
1.65mm
Standards/Approvals
No
Automotive Standard
No
Tuotetiedot
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.