Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
7.5A
Maximum Drain Source Voltage Vds
60V
Package Type
SO-8
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
21mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
2.5W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25nC
Maximum Gate Source Voltage Vgs
16V
Maximum Operating Temperature
150°C
Width
4mm
Height
1.65mm
Length
5mm
Standards/Approvals
No
Automotive Standard
No
Tuotetiedot
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
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LIITY ILMAISEKSI
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Varastotiedot eivät ole tilapäisesti saatavilla.
€ 1 497,50
€ 0,599 1 kpl (2500 kpl/kela) (ilman ALV)
€ 1 879,36
€ 0,752 1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
€ 1 497,50
€ 0,599 1 kpl (2500 kpl/kela) (ilman ALV)
€ 1 879,36
€ 0,752 1 kpl (2500 kpl/kela) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
2500
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
7.5A
Maximum Drain Source Voltage Vds
60V
Package Type
SO-8
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
21mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
2.5W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25nC
Maximum Gate Source Voltage Vgs
16V
Maximum Operating Temperature
150°C
Width
4mm
Height
1.65mm
Length
5mm
Standards/Approvals
No
Automotive Standard
No
Tuotetiedot
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
