Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-247
Series
MDmesh DM2
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
160mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
190W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
39nC
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Tuotetiedot
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 9,70
€ 4,85 1 kpl (2 kpl/pakkaus) (ilman ALV)
€ 12,17
€ 6,087 1 kpl (2 kpl/pakkaus) (Sis ALV:n)
Standardi
2
€ 9,70
€ 4,85 1 kpl (2 kpl/pakkaus) (ilman ALV)
€ 12,17
€ 6,087 1 kpl (2 kpl/pakkaus) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Standardi
2
| Määrä | Yksikköhinta | Per Pakkaus |
|---|---|---|
| 2 - 18 | € 4,85 | € 9,70 |
| 20 - 98 | € 3,95 | € 7,90 |
| 100 - 198 | € 3,00 | € 6,00 |
| 200+ | € 2,65 | € 5,30 |
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-247
Series
MDmesh DM2
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
160mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
190W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
39nC
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Tuotetiedot
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.