Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-247
Series
DM6
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
91mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
52.5nC
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.75mm
Height
20.15mm
Standards/Approvals
No
Automotive Standard
No
Alkuperämaa
China
Tuotetiedot
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
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LIITY ILMAISEKSI
Ei piilokuluja!
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 186,00
€ 6,20 1 kpl (30 kpl/putki) (ilman ALV)
€ 233,43
€ 7,781 1 kpl (30 kpl/putki) (Sis ALV:n)
30
€ 186,00
€ 6,20 1 kpl (30 kpl/putki) (ilman ALV)
€ 233,43
€ 7,781 1 kpl (30 kpl/putki) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
30
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-247
Series
DM6
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
91mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
52.5nC
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.75mm
Height
20.15mm
Standards/Approvals
No
Automotive Standard
No
Alkuperämaa
China
Tuotetiedot
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
