Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
66A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-247
Series
MDmesh DM2
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
42mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
446W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
121nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Alkuperämaa
China
Tuotetiedot
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 324,00
€ 10,80 1 kpl (30 kpl/putki) (ilman ALV)
€ 406,62
€ 13,554 1 kpl (30 kpl/putki) (Sis ALV:n)
30
€ 324,00
€ 10,80 1 kpl (30 kpl/putki) (ilman ALV)
€ 406,62
€ 13,554 1 kpl (30 kpl/putki) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
30
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
66A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-247
Series
MDmesh DM2
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
42mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
446W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
121nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Alkuperämaa
China
Tuotetiedot
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.