Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
68A
Maximum Drain Source Voltage Vds
650V
Series
ST
Package Type
TO-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.036Ω
Channel Mode
Depletion
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
450W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
125nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
5.1mm
Height
41.2mm
Length
15.9mm
Automotive Standard
No
Tuotetiedot
The STMicroelectronics N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 417,00
€ 13,90 1 kpl (30 kpl/putki) (ilman ALV)
€ 523,34
€ 17,444 1 kpl (30 kpl/putki) (Sis ALV:n)
30
€ 417,00
€ 13,90 1 kpl (30 kpl/putki) (ilman ALV)
€ 523,34
€ 17,444 1 kpl (30 kpl/putki) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
30
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
68A
Maximum Drain Source Voltage Vds
650V
Series
ST
Package Type
TO-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.036Ω
Channel Mode
Depletion
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
450W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
125nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
5.1mm
Height
41.2mm
Length
15.9mm
Automotive Standard
No
Tuotetiedot
The STMicroelectronics N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
