Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
Motor Driver IC
Configuration
H Bridge
Mount Type
Surface
Package Type
MultiPowerSO-30
Output Current
30A
Pin Count
30
Minimum Supply Voltage
5.5V
Maximum Supply Voltage
41V
Typical Switching Frequency
20kHz
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
150°C
Standards/Approvals
RoHS
Series
VNH5019A-E
Supply Current
8mA
Automotive Standard
AEC-Q100
Alkuperämaa
Malaysia
Tuotetiedot
The STMicroelectronics Automotive fully integrated H-bridge motor driver is a full bridge motor driver intended for a wide range of automotive applications. The device incorporates a dual monolithic high-side drivers and two low-side switches. The high-side driver switch is designed using STMicroelectronics well known and proven proprietary VI Power M0 technology that allows to efficiently integrate on the same die a true Power MOSFET with an intelligent signal or protection circuit.
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 10,40
€ 10,40 kpl (ilman ALV)
€ 13,05
€ 13,05 kpl (Sis ALV:n)
1
€ 10,40
€ 10,40 kpl (ilman ALV)
€ 13,05
€ 13,05 kpl (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
1
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
Motor Driver IC
Configuration
H Bridge
Mount Type
Surface
Package Type
MultiPowerSO-30
Output Current
30A
Pin Count
30
Minimum Supply Voltage
5.5V
Maximum Supply Voltage
41V
Typical Switching Frequency
20kHz
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
150°C
Standards/Approvals
RoHS
Series
VNH5019A-E
Supply Current
8mA
Automotive Standard
AEC-Q100
Alkuperämaa
Malaysia
Tuotetiedot
The STMicroelectronics Automotive fully integrated H-bridge motor driver is a full bridge motor driver intended for a wide range of automotive applications. The device incorporates a dual monolithic high-side drivers and two low-side switches. The high-side driver switch is designed using STMicroelectronics well known and proven proprietary VI Power M0 technology that allows to efficiently integrate on the same die a true Power MOSFET with an intelligent signal or protection circuit.